Field-Effect Transistors: Heterogeneous Nucleation Promotes Carrier Transport in Solution-Processed Organic Field-Effect Transistors (Adv. Funct. Mater. 3/2013)

Authors

  • Ruipeng Li,

    1. Materials Science and Engineering Program, Division of Physical Science and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
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  • Hadayat Ullah Khan,

    1. Materials Science and Engineering Program, Division of Physical Science and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
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  • Marcia M. Payne,

    1. Department of Chemistry, University of Kentucky, Lexington, KY 40506, USA
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  • Detlef-M. Smilgies,

    1. Cornell High Energy Synchrotron Source, Cornell University, Ithaca, NY 14850, USA
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  • John E. Anthony,

    1. Department of Chemistry, University of Kentucky, Lexington, KY 40506, USA
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  • Aram Amassian

    Corresponding author
    1. Materials Science and Engineering Program, Division of Physical Science and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
    • Materials Science and Engineering Program, Division of Physical Science and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia.
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Abstract

original image

In printed electronics, the drying semiconductor solution undergoes a solution-to-solid phase transformation that must yield optimal microstructure and performance. In small-molecule organic fieldeffect transistors (OFETs), it is crucial to yield films with large area lamellar coverage with excellent inplane p-stacking. On page 291 Aram Amassian and co-workers present new methodology and insight, which help to ensure that the drying solution crystallizes in optimal ways to promote carrier transport in OFETs.

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