Resistive Memory: 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory (Adv. Funct. Mater. 11/2013)

Authors

  • Gun Hwan Kim,

    1. WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university, Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
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  • Jong Ho Lee,

    1. WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university, Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
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  • Youngbae Ahn,

    1. WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university, Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
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  • Woojin Jeon,

    1. WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university, Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
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  • Seul Ji Song,

    1. WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university, Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
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  • Jun Yeong Seok,

    1. WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university, Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
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  • Jung Ho Yoon,

    1. WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university, Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
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  • Kyung Jean Yoon,

    1. WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university, Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
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  • Tae Joo Park,

    1. Department of Materials Engineering, Hanyang University, Ansan, 426-791, Korea
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  • Cheol Seong Hwang

    Corresponding author
    1. WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university, Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
    • WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university, Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea.
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Abstract

original image

Fully functional crossbar array ReRAM devices with 32 × 32 memory block size are reported by Cheol Seong Hwang and co-workers on page 1440. The schematic structure of the 1 diode-1 resistor crossbar array devices is shown in the image. The adopted Schottky diode, serially connected with a unipolar resistive switching memory element, suppresses the sneak-current flow. It also controls the conducting path formation during switching and protects the memory from noise during retention.

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