Field-Effect Transistors: Single-Crystalline p-Type Zn3As2 Nanowires for Field-Effect Transistors and Visible-Light Photodetectors on Rigid and Flexible Substrates (Adv. Funct. Mater. 21/2013)

Authors

  • Gui Chen,

    1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
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  • Zhe Liu,

    1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
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  • Bo Liang,

    1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
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  • Gang Yu,

    1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
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  • Zhong Xie,

    1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
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  • Hongtao Huang,

    1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
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  • Bin Liu,

    1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
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  • Xianfu Wang,

    1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
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  • Di Chen,

    1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
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  • Ming-Qiang Zhu,

    Corresponding author
    1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
    • Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China.
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  • Guozhen Shen

    Corresponding author
    1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
    • Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China.
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Abstract

original image

As reported by Ming-Qiang Zhu, Guozhen Shen, and co-workers on page 2681, single crystalline p-type Zn3As2 nanowires (NWs) are grown via a simple thermal evaporation process. Single and large-scale ordered Zn3As2 NW array field-effect transistors (FETs) on rigid SiO2/Si substrates and photodetectors on both rigid and flexible polyethylene terephthalate (PET) substrates are studied. They exhibit high performance, revealing that the p-type Zn3As2 NWs have important applications in future electronic and optoelectronic devices.

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