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Keywords:

  • Zn3As2 nanowires;
  • contact printing;
  • field-effect transistors;
  • flexible photodetectors
Thumbnail image of graphical abstract

As reported by Ming-Qiang Zhu, Guozhen Shen, and co-workers on page 2681, single crystalline p-type Zn3As2 nanowires (NWs) are grown via a simple thermal evaporation process. Single and large-scale ordered Zn3As2 NW array field-effect transistors (FETs) on rigid SiO2/Si substrates and photodetectors on both rigid and flexible polyethylene terephthalate (PET) substrates are studied. They exhibit high performance, revealing that the p-type Zn3As2 NWs have important applications in future electronic and optoelectronic devices.