Organic Electronics: Printed, Flexible, Organic Nano-Floating-Gate Memory: Effects of Metal Nanoparticles and Blocking Dielectrics on Memory Characteristics (Adv. Funct. Mater. 28/2013)

Authors

  • Minji Kang,

    1. Heeger Center for Advanced Materials, School of Materials Science and Engineering, School of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
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  • Kang-Jun Baeg,

    Corresponding author
    1. Nano Carbon Materials Research Group, Korea Electrotechnology Research Institute (KERI), 12, Bulmosan-ro 10beon-gil, Seongsan-gu, Changwon, Gyeongsangnam-do 642-120, Republic of Korea
    • Nano Carbon Materials Research Group, Korea Electrotechnology Research Institute (KERI), 12, Bulmosan-ro 10beon-gil, Seongsan-gu, Changwon, Gyeongsangnam-do 642-120, Republic of Korea
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  • Dongyoon Khim,

    1. Heeger Center for Advanced Materials, School of Materials Science and Engineering, School of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
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  • Yong-Young Noh,

    Corresponding author
    1. Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3 ga, Jung-gu, Seoul 100-715, Republic of Korea
    • Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3 ga, Jung-gu, Seoul 100-715, Republic of Korea.
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  • Dong-Yu Kim

    Corresponding author
    1. Heeger Center for Advanced Materials, School of Materials Science and Engineering, School of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
    • Heeger Center for Advanced Materials, School of Materials Science and Engineering, School of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
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Abstract

original image

High-performance, top-gated, organic, nanofloating gate memory (NFGM) devices fabricated using spatially well-distributed metallic nanoparticles as a floating gate and dielectrics with long charge relaxation properties are reported by Kang-Jun Baeg, Yong-Young Noh, Dong-Yu Kim, and co-workers on page 3503. The organic NFGM devices show wide memory windows, a high on/off current ratio, and quasi-permanent retention characteristics. The 256-bit NFGM array is also fabricated successfully on a flexible polyethylene naphthalate (PEN) substrate.

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