Flexible Transistors: Flexible Nonvolatile Transistor Memory Devices Based on One-Dimensional Electrospun P3HT:Au Hybrid Nanofibers (Adv. Funct. Mater. 39/2013)

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Abstract

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Electrospun P3HT:Au hybrid nanofibers are employed by W.-C. Chen and co-workers to fabricate a nonvolatile transistor memory device. On page 4960, using hybrid semiconducting nanofiber as channels and functionalized Au nanoparitcles as potential wells, it is demonstrated how charges can be stored or erased. The controllable storage density of high-performance hybrid nanofiber devices could be used in future plastic information storage.

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