GaAs Oxide Desorption under Extreme Ultraviolet Photon Flux (pages 587–592)
D. Ercolani, M. Lazzarino, G. Mori, B. Ressel, L. Sorba, A. Locatelli, S. Cherifi, A. Ballestrazzi and S. Heun
Article first published online: 23 MAR 2005 | DOI: 10.1002/adfm.200400033
An unexpectedly strong desorption effect due to the irradiation by extreme UV (EUV) light of gallium arsenide oxide structures fabricated by local anodization with atomic force microscopy is reported (see Figure). The chemistry of the oxide structures is determined by laterally resolved photoelectron spectroscopy. The possible impact on the development of EUV lithography is discussed.