Insight into the Role of Oxygen Diffusion in the Sensing Mechanisms of SnO2 Nanowires (pages 2990–2994)
Francisco Hernandez-Ramirez, Joan Daniel Prades, Albert Tarancon, Sven Barth, Olga Casals, Roman Jimenez-Diaz, Eva Pellicer, Jordi Rodriguez, Joan Ramon Morante, Miguel Angel Juli, Sanjay Mathur and Albert Romano-Rodriguez
Article first published online: 9 SEP 2008 | DOI: 10.1002/adfm.200701191
Oxygen diffusion causes strong changes to the electrical properties of SnO2 nanowires, leading to long-term resistance transients when gas-sensing measurements are performed. Accurate modeling of this phenomenon is necessary to develop real nanodevices and to avoid undesired drift effects. A model that describes the dependence of nanowire resistance on oxygen partial pressure has been developed and applied for the characterization of other oxides (see figure).