High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization (pages 3794–3800)
Hannah J. Joyce, Qiang Gao, H. Hoe Tan, Chennupati Jagadish, Yong Kim, Melodie A. Fickenscher, Saranga Perera, Thang Ba Hoang, Leigh M. Smith, Howard E. Jackson, Jan M. Yarrison-Rice, Xin Zhang and Jin Zou
Article first published online: 22 SEP 2008 | DOI: 10.1002/adfm.200800625
Eliminating structural defects, crystallographic defects and intrinsic dopants in nanowire “nano-components” is critical for development of nanowire-based devices. High purity, uniformly aligned epitaxial GaAs nanowires free of planar crystallographic defects and with excellent optical properties are demonstrated. The figure shows SEM and TEM images and the photoluminescence spectrum of these excellent nanowires.