Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory (pages 1587–1593)
Myoung-Jae Lee, Sun I. Kim, Chang B. Lee, Huaxiang Yin, Seung-Eon Ahn, Bo S. Kang, Ki H. Kim, Jae C. Park, Chang J. Kim, Ihun Song, Sang W. Kim, Genrikh Stefanovich, Jung H. Lee, Seok J. Chung, Yeon H. Kim and Youngsoo Park
Article first published online: 4 DEC 2008 | DOI: 10.1002/adfm.200801032
An all-oxide-based memory structure can be stacked by using GaInZnO thin-film transistors, grown at room temperature together with a one diode (CuO/InZnO)–one-resistor (NiO) structure oxide storage node elements, fabricated at room temperature. Such an all-oxide-based device with the stacked peripheral circuit array may lead to the terabit era.