A General Approach to Semimetallic, Ultra-High-Resolution, Electron-Beam Resists (pages 1437–1443)
Bao-Yu Zong, Gu-Chang Han, Yuan-Kai Zheng, Li-Hua An, Tie Liu, Ke-Bin Li, Jin-Jun Qiu, Zai-Bing Guo, Ping Luo, Hao-Min Wang and Bo Liu
Article first published online: 16 MAR 2009 | DOI: 10.1002/adfm.200800939
Commercial e-beam resists are modified into semimetallic resists by doping with 1–3 nm metal particles; this improves their resolution, contrast, and dry-etching resistance. With these modified positive- and negative-tone resists, fine resist patterns from electron-beam (e-beam) lithography are readily converted into high quality of 5–50 nm multilayer metallic sensors via ion-beam etching (see figure).