Polymer Field-Effect Transistors Fabricated by the Sequential Gravure Printing of Polythiophene, Two Insulator Layers, and a Metal Ink Gate (pages 239–246)
Monika M. Voigt, Alexander Guite, Dae-Young Chung, Rizwan U. A. Khan, Alasdair J. Campbell, Donal D. C. Bradley, Fanshun Meng, Joachim H. G. Steinke, Steve Tierney, Iain McCulloch, Huguette Penxten, Laurence Lutsen, Olivier Douheret, Jean Manca, Ulrike Brokmann, Karin Sönnichsen, Dagmar Hülsenberg, Wolfgang Bock, Cecile Barron, Nicolas Blanckaert, Simon Springer, Joachim Grupp and Alan Mosley
Article first published online: 16 DEC 2009 | DOI: 10.1002/adfm.200901597
Using the ultrahigh-volume technique of gravure contact printing, the principal components of organic electronics (semiconductor, insulator, conductor) are deposited, fabricating state-of-the-art polymer field-effect transistors. The window of printing parameters, such as molecular weight, solvent dependency, viscosity, and shear behavior, are identified; and the resolution limit of gravure is pushed down to 20 µm.