Continuous Control of Charge Transport in Bi-Deficient BiFeO3 Films Through Local Ferroelectric Switching (pages 4962–4968)
Tae Heon Kim, Byung Chul Jeon, Taeyoon Min, Sang Mo Yang, Daesu Lee, Yong Su Kim, Seung-Hyub Baek, Wittawat Saenrang, Chang-Beom Eom, Tae Kwon Song, Jong-Gul Yoon and Tae Won Noh
Article first published online: 25 JUL 2012 | DOI: 10.1002/adfm.201201490
Continuous control of charge transport and polarization hysteresis in Bi-deficient BiFeO3 films through local ferroelectric switching is demonstrated. Application of a dc voltage stress to Bi1-δFeO3 capacitors causes local polarization switching. In the switched domain regions, holes are injected at the film/bottom electrode interface, leading to reverse diode behavior. The injected holes are trapped near tail-to-tail domain walls, inducing a pinning effect with shrinkage of the polarization hysteresis loop.