32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory (pages 1440–1449)
Gun Hwan Kim, Jong Ho Lee, Youngbae Ahn, Woojin Jeon, Seul Ji Song, Jun Yeong Seok, Jung Ho Yoon, Kyung Jean Yoon, Tae Joo Park and Cheol Seong Hwang
Article first published online: 18 OCT 2012 | DOI: 10.1002/adfm.201202170
1 diode 1 resistor (1D1R) resistive memory devices with the crossbar array configuration composed of a stacked Schottky diode (Pt/TiO2/Ti/Pt) and unipolar resistive (URS) memory (Pt/TiO2/Pt) elements are fabricated, and their fluent functionality is proven. Atomic force microscopy is used to image one memory cell and scanning electron microscopy is used to study the 32 × 32 memory array.