High-Performance n-Channel Thin-Film Field-Effect Transistors Based on a Nanowire-Forming Polymer (pages 2060–2071)
Suk Gyu Hahm, Yecheol Rho, Jungwoon Jung, Se Hyun Kim, Tissa Sajoto, Felix S. Kim, Stephen Barlow, Chan Eon Park, Samson A. Jenekhe, Seth R. Marder and Moonhor Ree
Version of Record online: 20 NOV 2012 | DOI: 10.1002/adfm.201202065
n-Channel polymer field-effect transistor (FET) devices are fabricated via a simple coating process using a suspension containing thermally stable nanowires prepared from a new perylene diimide polymer. The devices show excellent performance with remarkably high average electron mobilities, high on/off ratios, low threshold voltages, and negligible hysteresis. These properties are attributed to the formation of nanowires and ordered phases with a high degree of molecular ordering and a preferential orientation within the active polymer layer. This may lead to the low-cost mass production of high-performance n-channel FET devices.