Domain Wall Conduction and Polarization-Mediated Transport in Ferroelectrics (pages 2592–2616)
Rama K. Vasudevan, Weida Wu, Jeffrey R. Guest, Arthur P. Baddorf, Anna N. Morozovska, Eugene A. Eliseev, Nina Balke, V. Nagarajan, Peter Maksymovych and Sergei V. Kalinin
Article first published online: 11 APR 2013 | DOI: 10.1002/adfm.201300085
Nanometer-scale electronic transport in engineered interfaces in ferroelectrics, such as domains and topological defects, has emerged as a topic of broad interest. The use of scanning probe micro scopies to access topological defects and directly measure their unique properties is reviewed. It is found that observation of enhanced conduction at domain walls can be attributed to segregation of carriers at charged walls. Furthermore, the potential distribution around a curved or tilted wall can be highly assymetric, even for nominally uncharged walls due to strain and flexo-electric couplings.