Surface analysis III. Planar array of atomic scale tunneling diodes


  • For Part II see Adv. Mater. 2 (1990) 100.


Surface Analysis III: The recent demonstration of the tunneldiode effect on an atomic scale forms the basis of this article which also looks at the overall trends towards miniaturazation of devices down to the atomic scale. The latest achievement is based on the ability of the scanning tunneling microscope (STM) to image regions of negative differential conductivity on the surface of boron doped silicon.