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III/V semiconductors: Substrate materials and epitaxy

Authors

  • Dr. Gerhard Packeiser

    1. Siemens AG, Corporate Research and Development III/V-Electronics Otto-Hahn-Ring 6, D-8000 Munich 83 (FRG)
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    • Gerhard Packeiser was born in 1947. He studied physics in Göttingen with special emphasis on metal physics. is diploma and Ph.D. thesis were concerned with the plastcity of alloys and elemental semiconductors. He joined the Siemens Semiconductor Divison in 1979, working there on the failure analysis and material-related yield limitations of microelectronic and optoelectronic devices. Since 1981 he has been with the Siemens Corporate Research Laboratories working in the area of solid-state electronics and is presently responsible for electronic III/V-heterostructure device development.


  • The author gratefully acknowledges helpful discussions with H. C. Alt, M. C. Amann, H. Kniepkamp, R. D. Schnell, J. Volkl and A. Winnacker.

Abstract

High-speed-, and optical devices are two applications of compound semiconductors. The methods used in the production of GaAs (and other III-V semiconductors) including MBE and MOCVD, are discussed along with materials characterization and present and future applications.

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