High-resolution Electron Microscopy of semiconductors and metals

Authors

  • Corrie W. T. Bulle-Lieuwma,

    1. Philips Research Laboratories P.O. Box 80000, NL-5600 JA Eindhoven (The Netherlands)
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    • Graduated in chemistry at the IHBO in Eindhoven (1967) before starting to work in the department “Chemical Analysis” of the Philips Research Laboratories, in the field of gas-chromatography of solid-state materials. She started to work in the department “Structural Analysis” in 1973, initially on high-resolution X-ray diffraction, later on the application of scanning electron microscopy. Since 1979 she has been involved in TEM of semiconductor materials, with emphasis on hetero-epitaxial structures. She will finish her Ph. D. thesis on TEM of the hetero-epitaxial CoSi/Si system at the university of Utrecht in 1991.

  • Dr. Wim Coene,

    1. Philips Research Laboratories P.O. Box 80000, NL-5600 JA Eindhoven (The Netherlands)
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    • Graduated in physics in 1982 at the University of Antwerp (Belgium), and was awarded a Ph. D. in 1986 from the Centre for High Voltage Electron Microscopy (Antwerp) for work on image simulations for HREM. Since 1988, he has been working in the department “Structure Analysis” of the Philips Research Laboratories (Eindhoven) with an emphasis on TEM of metals and metallic multilayers.

  • Dr. A. Frank de Jong

    1. Philips Research Laboratories P.O. Box 80000, NL-5600 JA Eindhoven (The Netherlands)
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    • Graduated in physical chemistry at the University of Groningen (The Netherlands) in 1984 before starting to work in the department “Structure Analysis” of the Philips Research Laboratories in Eindhoven. While working there, he prepared a thesis on the interpretation of TEM images for thin semiconductor layers and interfaces for which he was awarded a Ph. D. from the Delft Technical University in 1990.


  • The TEM results reported in this paper have been obtained in cooperation with the departments Semiconductor Materials Science (A. A. van Gorkum), Metals (R. H. J. Fastenau) and Magnetism (J. W. Smits) of the Philips Research Laboratories. The scientific collaboration with K. H. J. Buschow, F. J. A. den Broeder, R. Coehoorn, F. Hakkens, T. H. Jacobs, D. B. de Mooij, A. H. van Ommen, and D. E. W. Vandenhoudt is greatly appreciated. We also acknowledge a fruitful cooperation with J. F. van der Veen (FOM-AMOLF Institute, Amsterdam), and H. von Känel (ETH Zürich).

Abstract

Review: Two-dimensional information on the microstructure of materials at a resolution comparable to interatomic distances is crucial for the study of interfaces, defects, growth mechanisms etc. One of the most important analytical methods for gaining such information is high-resolution electron microscopy (HREM). The interpretation of the results on semiconductors, magnetic alloys and multilayers, can often be facilitated through image processing and simulation.

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