Studied mineralogy and crystallography at the University of Heidelberg, FRG gaining his Ph.D. in 1988 for studies of copper silicates and germanates using X-ray diffaction and thermal analysis. He joined the Wacker-Chemitronic GmbH in 1988, where he was responsible for the quality of the raw materials in the gallium arsenide production, analysis and the study of the fundamental principles of the LEC-crystal growth process. Since the beginning of 1991 he has been working in the R & D department of the silicon business area with special emphasis on the bulk characteristics of monocrystalline silicon.
Chemical interactions in GaAs-LEC crystal growth†
Article first published online: 15 SEP 2004
Copyright © 1991 Verlag GmbH & Co. KGaA, Weinheim
Volume 3, Issue 9, pages 429–435, September 1991
How to Cite
Lambert, U. and Wiese, U. (1991), Chemical interactions in GaAs-LEC crystal growth. Adv. Mater., 3: 429–435. doi: 10.1002/adma.19910030904
The financial support of the “Bundesministerium für Forschung und Technologie” (Bonn, FRG) is gratefully acknowledged.
- Issue published online: 15 SEP 2004
- Article first published online: 15 SEP 2004
- Manuscript Received: 15 MAR 1991
Review: Light-emitting diodes, high-speed transistors, laser diodes, and solar cells are just a few of the applications of gallium arsenide (GaAs), for which the availability of ultrapure materials or materials with closely controlled impurity profiles is of utmost importance. The development and optimization of one major method of GaAs crystal growth is described with special emphasis on the possibilities of controlling the conductivity characteristics of the material.