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Abstract

The effects of unintentional hydrogen incorporation into both Si and III-V materials during processing is likely to become more important as device dimensions are scaled down and even tighter control is required on the doping densities within the active and contact regions. Since hydrogen is a constituent of virtually every chemical reagent or gas that is used in semiconductor processing it is almost impossible to avoid near-surface dopant passivation occurring during some of the processing steps. However, relatively low-temperature heat treatments are effective in reactivating these dopants.