Born in 1957. He studied physics at the University o f Tasmania and obtained a Ph.D. in physics for work on deep-level defects in semiconductors carried out at the Australian Atomic Energy Commission. After spending a year at Lawrence Berkeley Laboratory, he joined AT & T Bell Laboratories in 1984 and has worked in the areas of ion implantation and rapid thermal processing of III–V materials, dry etching, GaAs-on-Si and hydrogenation effects.
Hydrogen in Semiconductors: Crystal growth and device processing†
Article first published online: 15 SEP 2004
Copyright © 1992 Verlag GmbH & Co. KGaA, Weinheim
Volume 4, Issue 5, pages 332–340, May 1992
How to Cite
Pearton, S., Stavola, M. and Corbett, J. W. (1992), Hydrogen in Semiconductors: Crystal growth and device processing. Adv. Mater., 4: 332–340. doi: 10.1002/adma.19920040503
The authors gratefully acknowledge the contributions of many of their colleagues to this work, including J. Lopata, D. M. Kozuch, C. R. Abernathy, W S. Hobson, V. Swaminathan, J. Weber, W. C. Dautremont-Smith, K. Bergman, and J. T. Borenstein. The work of M. Stavola is supported by NSF Grant No. DMR-9023419 and the work of J. W. Corbett is partially supported by grants from the Solar Energy Research Institute, the IBM Corporation, and the Mobil Foundation. [AM R 112]
- Issue published online: 15 SEP 2004
- Article first published online: 15 SEP 2004
- Manuscript Revised: 11 OCT 1991
- Manuscript Received: 1 AUG 1991
The effects of unintentional hydrogen incorporation into both Si and III-V materials during processing is likely to become more important as device dimensions are scaled down and even tighter control is required on the doping densities within the active and contact regions. Since hydrogen is a constituent of virtually every chemical reagent or gas that is used in semiconductor processing it is almost impossible to avoid near-surface dopant passivation occurring during some of the processing steps. However, relatively low-temperature heat treatments are effective in reactivating these dopants.