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New routes to Cu-patterned teflon substrates

Authors

  • Prof. Mark J. Hampden-Smith,

    Corresponding author
    1. Department of Chemistry and Center for Micro-Engineered Ceramics University of New Mexico, Albuquerque, NM 87131 (USA)
    • Department of Chemistry and Center for Micro-Engineered Ceramics University of New Mexico, Albuquerque, NM 87131 (USA)
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  • Prof. Toivo T. Kodas,

    Corresponding author
    1. Department of Chemical Engineering and Center for Micro-Engineered Ceramics University of New Mexico, Albuquerque, NM 87131 (USA)
    • Department of Chemical Engineering and Center for Micro-Engineered Ceramics University of New Mexico, Albuquerque, NM 87131 (USA)
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  • Dr. Robert R. Rye

    Corresponding author
    1. Division 1114, Sandia National Laboratories Albuquerque, New Mexico 87185 (USA)
    • Division 1114, Sandia National Laboratories Albuquerque, New Mexico 87185 (USA)
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  • The authors wish to thank their co-workers who are identified in the references to this text for their efforts in various aspects of this work. MHS and TTK thank the National Science Foundation for support. RRR thanks the U.S. Doe for support under Contract No. DEACO4-76p00789.

Abstract

In microelectronics, copper conductors and Teflon substrates are the materials of choice in many applications due to the high conductivity of copper and the low dielectric constant of Teflon. The nature of Teflon, however, results in low adhesion strength, which makes a multi-step Cu-deposition process necessary. Here, an alternative, selective CVD, which can produce smaller feature sizes and reduces the need for wet etching, is presented and explained.

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