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Advanced Materials

Ion implanted material in highly integrated GaAs ICs

Authors

  • Dr. Frederick A. Myers

    Corresponding author
    1. Technical Executive, GaAs IC Division GEC-Marconi Materials Technology Ltd. Northants NN12 8EQ (UK)
    • Technical Executive, GaAs IC Division GEC-Marconi Materials Technology Ltd. Northants NN12 8EQ (UK)
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Abstract

Selective ion implantation and epitaxy are beginning to increase the degree of integration of monolithic microwave ICs (MMICs). Most MMICs produced to date have only a single function per chip, for example the C-band phased array radar T/R module illustrated in the Figure, but selective ion implantation has allowed a complex, multifunction GaAs MMIC to be realized recently.

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