Ferroelectric thin films

Authors

  • Dr. David A. Tossell,

    Corresponding author
    1. GEC-Marconi Material tecnology Ltd. Caswell, Towester Northants NN12 8EQ (UK)
    • GEC-Marconi Material tecnology Ltd. Caswell, Towester Northants NN12 8EQ (UK)
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  • Dr. Anil Patel

    Corresponding author
    1. GEC-Marconi Material tecnology Ltd. Caswell, Towester Northants NN12 8EQ (UK)
    • GEC-Marconi Material tecnology Ltd. Caswell, Towester Northants NN12 8EQ (UK)
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Abstract

Lead-based ferroelectric thin films have many potential pyroelectric and electro-optic applications. Thin-film-based devices are very likely to replace their bulk wafer counterparts within the next few years, particularly where full integration with silicon technology becomes feasible. The sol-gel route is shown to produce PST films with properties approaching those of the bulk, and dual ion beam sputtering is demonstrated to have the capability of significantly affecting the film density, stoichiometry, morphology and even the crystalline phase during the growth of PLZT thin films.

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