Growth of GaAs and Al GaAs by chemical beam epitaxy—precursor requirements and recent developments


  • Dr. Anthony C. Jones

    Corresponding author
    1. Epichem Limited Power Road, Bromborough, Wirral, Merseyside L62 3QF (UK)
    • Epichem Limited Power Road, Bromborough, Wirral, Merseyside L62 3QF (UK)
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    • trained as an organometallic chemist at the University of Manchester, where he received both his B.Sc. (1976) and Ph.D. (1979). From 1980 to 1983 he undertook post-doctoral research at the University of Liverpool in the Department of Inorganic, Physical and Industrial Chemistry. While at Liverpool his research was concerned with the development of novel synthetic and purification routes to main group organometallic compounds for use in metal organic vapor phase epitaxy. In 1983, together with A. B. Leese and G. Williams, he founded Epichem Limited, where he is currently Technical Director. This company was set up specifically to manufacture chemicals for the semiconductor industry and currently produces silane for silicon epitaxy and a range of organometallic precursors, for III–V und III–VI semiconductors.

  • Part of this work was carried out on the UK LINK/ASM MOMBE project supported by the DTI, and continued funding is gratefully acknowledged. It is also a pleasure to acknowledge the valuable contributions of Professor C. R. Whitehouse, Dr. T. Martin, Dr. P. A. Lane and Mr. R. W. Freer (DRA, Electronics Division, RSRE, Malvern, UK), Dr. J. S. Foord (Oxford University, UK) and Dr. C. R. Abernathy (AT & T Bell Labs, Murray Hill, NJ, USA). Many thanks are also due to Professor K. Jensen (MIT Cambridge, MA, USA) for kindly allowing the reproduction of Figure 10 from the proceedings of ICMOVPE-6.


Semiconductor layers of gallium arsenide and aluminum gallium arsenide are finding increasing application in photonic (solar cells, LEDs, etc.) and microwave (e.g. HEMTs) devices. The ultra-high vacuum technique “chemical beam epitaxy” (see Figure) can be effectively used to produce such layers. The method and its competitors are compared.

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