trained as an organometallic chemist at the University of Manchester, where he received both his B.Sc. (1976) and Ph.D. (1979). From 1980 to 1983 he undertook post-doctoral research at the University of Liverpool in the Department of Inorganic, Physical and Industrial Chemistry. While at Liverpool his research was concerned with the development of novel synthetic and purification routes to main group organometallic compounds for use in metal organic vapor phase epitaxy. In 1983, together with A. B. Leese and G. Williams, he founded Epichem Limited, where he is currently Technical Director. This company was set up specifically to manufacture chemicals for the semiconductor industry and currently produces silane for silicon epitaxy and a range of organometallic precursors, for III–V und III–VI semiconductors.
Growth of GaAs and Al GaAs by chemical beam epitaxy—precursor requirements and recent developments†
Article first published online: 29 OCT 2004
Copyright © 1993 Verlag GmbH & Co. KGaA, Weinheim
Volume 5, Issue 2, pages 81–87, February 1993
How to Cite
Jones, A. C. (1993), Growth of GaAs and Al GaAs by chemical beam epitaxy—precursor requirements and recent developments. Adv. Mater., 5: 81–87. doi: 10.1002/adma.19930050203
Part of this work was carried out on the UK LINK/ASM MOMBE project supported by the DTI, and continued funding is gratefully acknowledged. It is also a pleasure to acknowledge the valuable contributions of Professor C. R. Whitehouse, Dr. T. Martin, Dr. P. A. Lane and Mr. R. W. Freer (DRA, Electronics Division, RSRE, Malvern, UK), Dr. J. S. Foord (Oxford University, UK) and Dr. C. R. Abernathy (AT & T Bell Labs, Murray Hill, NJ, USA). Many thanks are also due to Professor K. Jensen (MIT Cambridge, MA, USA) for kindly allowing the reproduction of Figure 10 from the proceedings of ICMOVPE-6.
- Issue published online: 29 OCT 2004
- Article first published online: 29 OCT 2004
- Manuscript Revised: 6 OCT 1992
- Manuscript Received: 25 AUG 1992
Options for accessing this content:
- If you have access to this content through a society membership, please first log in to your society website.
- If you would like institutional access to this content, please recommend the title to your librarian.
- Login via other institutional login options http://onlinelibrary.wiley.com/login-options.
- You can purchase online access to this Article for a 24-hour period (price varies by title)
- If you already have a Wiley Online Library or Wiley InterScience user account: login above and proceed to purchase the article.
- New Users: Please register, then proceed to purchase the article.
If your institution is a registered Wiley Online Library customer, you can log in under your institution's name to see our content. This access is provided by Shibboleth or Athens.
Type your institution's name in the box below. If your institution is a Wiley customer, it will appear in the list of suggested institutions.
Please note that there are currently a number of duplicate entries in the list of institutions. We are actively working on fixing this issue and apologize for any inconvenience caused.
Registered Users please login:
- Access your saved publications, articles and searches
- Manage your email alerts, orders and subscriptions
- Change your contact information, including your password
Please register to:
- Save publications, articles and searches
- Get email alerts
- Get all the benefits mentioned below!