is the leader of the Inoue Quantum Structure Research Group at the NTT LSI Laboratories. He studied applied physics at the University of Tokyo, where he obtained his Ph.D. in 1973. He then joined NTT Electrical Communication Laboratories. His main activities have been in the field of crystal characterization and growth. Since 1989 he has been responsible for a group working on the fabrication and characterization of quantum structures.
Compound Semiconductor Ultrathin Films— characterization and control of growth†
Article first published online: 29 OCT 2004
Copyright © 1993 Verlag GmbH & Co. KGaA, Weinheim
Volume 5, Issue 3, pages 192–197, March 1993
How to Cite
Inoue, N. (1993), Compound Semiconductor Ultrathin Films— characterization and control of growth. Adv. Mater., 5: 192–197. doi: 10.1002/adma.19930050307
The author is grateful to his colleagues for their contributions to the work described here. Thanks are due to Yoshiji Horikoshi, Naoki Kobayashi and Kazumi Wada for permission to use the figures.
- Issue published online: 29 OCT 2004
- Article first published online: 29 OCT 2004
- Manuscript Revised: 12 OCT 1992
- Manuscript Received: 11 MAY 1992
The unprecedented control of ultra-thin-film properties required by advanced device concepts has led to the development of novel techniques for both growth and characterization, including cathodoluminescence microscopy, scanning tunneling microscopy and in situ optical diagnostics. In situ electron microscopy can be used to directly observe transient growth processes, revealing unexpected features such as the lateral growth of Ga layers around droplets when the surrounding surface is covered with As (Figure).