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Advanced Materials

(Me5C5)SiH3 and (Me5C5)2SiH2 as precursors for low-temperature remote plasma-enhanced CVD of thin Si3N4 and SiO2 films

Authors

  • Jürgen Dahlhaus,

    1. Fäkultat für Chemie der Universität Bielefeld Universitätsstrasse, W-4800 Bielefeld 1 (FRG)
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  • Prof. Peter Jutzi,

    Corresponding author
    1. Fäkultat für Chemie der Universität Bielefeld Universitätsstrasse, W-4800 Bielefeld 1 (FRG)
    • Fakultät für Chemie der Universität Bielefeld Universitätsstrasse, W-4800 Bielefeld 1 (FRG)
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  • Dr. Hubert-Joachim Frenck,

    1. Institut für Technische Physik, Universität Kassel Heinrich -Plett-Strasse 40, W-3500 Kassel (FRG)
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  • Dr. Wilhelm Kulisch

    Corresponding author
    1. Institut für Technische Physik, Universität Kassel Heinrich -Plett-Strasse 40, W-3500 Kassel (FRG)
    • Institut für Technische Physik, Universität Kassel Heinrich -Plett-Strasse 40, W-3500 Kassel (FRG)
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Abstract

Silicon nitride (Si3N4) and silica (SiO2) thin films are of interest for applications in microelectronics and optics. Non-hazardous alternatives to silane (SiH4) as the silicon precursor in the chemical vapor deposition (CVD) of these materials are in attractive target for research. It is shown that pentamethylcyclopentadiene-substituted dilanes offer the opportunity to tailor precursors for particular CVD requirements.

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