The multiple tunnel junction and its application to single-electron memories

Authors

  • DR. Kazuo Nakazato,

    1. Hitachi Cambridge Laboratory, Hitachi Europe Ltd. Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE (UK)
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  • Prof. Haroon Ahmed

    Corresponding author
    1. Department of Physics, University of Cambridge Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE (UK)
    • Department of Physics, University of Cambridge Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE (UK)
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Abstract

Single-electron memories and single-electron logic circuits are two devices that can be constructed from multiple tunnel junctions (MTJs). The electrical characteristics of this basic building block are described, and the fabrication of very small MTJ devices is outlined. The simple structure of the MTJ and the low power consumption and small size of MTJ devices could open up a new era in electron device technology, with devices being constructed from materials completely different from those used in the present semiconductor industry.

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