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Highly oriented poly(di-n-alkylsilylene) films on oriented PTFE substrates

Authors

  • Dr. Holger Frey,

    1. Center for Materials Research and Department of Chemical Technology, Universiteit Twente Postbus 217, 7500 AE Enschede (The Netherlands)
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  • Dr. Sergej Sheiko,

    1. Center for Materials Research and Department of Chemical Technology, Universiteit Twente Postbus 217, 7500 AE Enschede (The Netherlands)
    Current affiliation:
    1. Organische Chemie III/Makromolekulare Chemie, Universität Ulm, Albert-Einstein-Allee 11, D-89081 Ulm (FRG)
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  • Prof. Martin Möller,

    Corresponding author
    1. Center for Materials Research and Department of Chemical Technology, Universiteit Twente Postbus 217, 7500 AE Enschede (The Netherlands)
    Current affiliation:
    1. Organische Chemie III/Makromolekulare Chemie, Universität Ulm, Albert-Einstein-Allee 11, D-89081 Ulm (FRG)
    • Center for Materials Research and Department of Chemical Technology, Universiteit Twente Postbus 217, 7500 AE Enschede (The Netherlands)
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  • Prof. Jean Claude Wittmann,

    1. Institut Charles Sadron (CRM-EAHP) 6, rue Boussingault, F-67083 Strasbourg Cédex (France)
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  • Prof. Bernard Lot

    1. Institut Charles Sadron (CRM-EAHP) 6, rue Boussingault, F-67083 Strasbourg Cédex (France)
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Abstract

Highly oriented polysilylene layers have potential applications in electrophotography, nonlinear optics, display fabrication, and microlithography. The preparation of such layers by crystallization on a highly oriented PTFE substrate is reported, and their assessment by optical birefringence, electron diffraction and dichroic infrared experiments described. Why this orientation technique works is not yet clear, especially as it can be applied to poly(di-n-alkylsilylen)s with different crystal structures. Several possible underlying mechanisms are discussed.

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