The authors are grateful to Mr. M. Cheney (University of keele) for provision of the reactively sputtered AIN films grown on glass. This work has been supported by the DTI and SERC under the LINK/ATP initiative.
The deposition of aluminum nitride thin films by metal-organic CVD—an alternative precursor system†
Article first published online: 15 SEP 2004
Copyright © 1994 Verlag GmbH & Co. KGaA, Weinheim
Volume 6, Issue 3, pages 229–231, March 1994
How to Cite
Jones, A. C., Auld, J., Rushworth, S. A., Williams, E. W., Haycock, P. W., Tang, C. C. and Critchlow, G. W. (1994), The deposition of aluminum nitride thin films by metal-organic CVD—an alternative precursor system. Adv. Mater., 6: 229–231. doi: 10.1002/adma.19940060310
- Issue published online: 15 SEP 2004
- Article first published online: 15 SEP 2004
- Manuscript Revised: 6 DEC 1993
- Manuscript Received: 3 NOV 1993
Thin films of aluminum nitride have applications in magnetooptic multilayer structures. Methods must therefore be developed for depositing thin films of this commercially important material at low to moderate substrate temperatures. Conventional CVD riquires a high substrate. The preliminary results presented here show that AIN films grown by metalorganic CVD using Me3Al combined with either tertiary butylamine of isoproplamine, a technique avoiding the above problems, are of sufficient quality for magnetooptical applications. A possible deposition mechanism is proposed.