Oriented growth of quinquethiophene on SiO2—An atomic force microscopy study

Authors

  • Oliver Böhme,

    Corresponding author
    1. Institut für Physikalische und Theoretische Chemie Universität Tübingen Auf der Morgenstelle 8, D-72076 Tübingen (FRG)
    • Institut für Physikalische und Theoretische Chemie Universität Tübingen Auf der Morgenstelle 8, D-72076 Tübingen (FRG)
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  • Dr. Christiane Ziegler,

    1. Institut für Physikalische und Theoretische Chemie Universität Tübingen Auf der Morgenstelle 8, D-72076 Tübingen (FRG)
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  • Prof. Wolfgang Göpel

    1. Institut für Physikalische und Theoretische Chemie Universität Tübingen Auf der Morgenstelle 8, D-72076 Tübingen (FRG)
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  • The authors gratefully acknowledge the synthesis of oligothiophenes by Dr. H. Naarmann, BASF, Ludwigshafen and the technical assistance by W. Neu. A great variety of samples were kindly provided by D. Oeter. This work was partially financed by the Bundesministerium für Forschung und Technologie, contract 01 BT292/0.

Abstract

Highly ordered organic films must be prepared and characterized if the electrical properties of future organic-based electronic devices are to be improved, because it is only then that our understanding of intermolecular transport in polymer films can increase. An atomic force microscopy study is presented that shows that quinquethiophene can be physisorbed on Si02 to form highly ordered layers. A change from layer-by-layer to multilayer growth is reported to occur upon completion of the second monolayer.

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