Bimetallic Fe/Ga thin films from single sources; molecular control of the thin film stoichiometry

Authors


  • This work was supported by the “Deutsche Forschungsgemeinschaft”, the “Fonds der Chemischen Industric”, and the “Friedrich-Schiedel Foundation”.

Abstract

Single source CVD precursors for FeGa thin films (e.g. see Fig.) are reported. The precursors are volatile, give clean deposits, and allow the use of unprecedented mild deposition conditions, at temperatures well below the decomposition temperature of the GaAs substrate. It is also shown that single-source precursors for binary materials should be designed with the strongest bond joining the atoms which make up the final material.

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