Advanced Materials

Imaging the surfaces of nanoporous semiconductors by atomic force microscopy


  • We wish to acknowledge H. Ahari, C. L. Bowes, T. Jiang, A. J. Lough, and D. Young from the University of Toronto for the synthesis and characterization of the materials an for helpful discussions. The financial support of the Canadian Space Agency, the Natural sciences and Engineering Research Council of Canada (NSERC), and UOP, Tarrytown, NY is greatly appreciated. The AFM was purchased with a generous NSERC equipment grant to GSH


Open framework semiconductors tin(IV) sulfides and tin(IV) selenides) exhibiting bulk crystalline nanoporosity have been studied using atomic force microscopy (AFM). The bulk porosity is reflected in the surface structures of these materials (see Fig.), and little reconstruction can be detected, important points in the assessment of the electrical transport characteristics of this new class of nanoporous materials.

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