CVD of Covalent Compounds and high-Tc superconductors

Authors

  • Dr. Cristina Gómez-Aleixandre,

    1. Institute Cicncia do Materiales, CSIC, Univ. Autónoma, C12 Cantoblanco, E-28049 Madrid (Spain)
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    • received her Ph.D. from the University of Madrid in 1977 for work on the analysis of amino acid crystals by infrared spectroscopy. In 1987 the joined the staff of the Institute of Materials Science of the Spanish Research Council (CSIC). Her research interests are the synthesis of materials by CVD techniques for a wide variety of applications (hard coatings, optical films, ceramic materials etc.).

  • Dr. Olga Sanchez,

    1. Institute Cicncia do Materiales, CSIC, Univ. Autónoma, C12 Cantoblanco, E-28049 Madrid (Spain)
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  • Prof. José M. Albella,

    1. Institute Cicncia do Materiales, CSIC, Univ. Autónoma, C12 Cantoblanco, E-28049 Madrid (Spain)
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  • Dr. José Santiso,

    1. Institut de Ciencia do Materials, CSIC, Campus de la Universidad Autónoma do Barcelona Bellaterra, E-08193 Barcelona (Spain)
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  • Dr. Albert Figueras

    1. Institut de Ciencia do Materials, CSIC, Campus de la Universidad Autónoma do Barcelona Bellaterra, E-08193 Barcelona (Spain)
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    • was born in Barcelona, Spain and educated at the Universitat de Barcelona. He pursued his graduate studies at the CSIC in Barcelona and at the Laboratoire de Physique des Solides of the Université de Paris Sud, Orsay. He joined the Physics Faculty at Barcelona University as an Associate Professor in 1978. Since 1988 he has been with the CSIC, working at the Institute de Ciéncia de Materials de Barcelona as a staff member. He is currently interested in the preparation and characteization of thin films by metal-organic chemical vapor deposition.


Abstract

Chemical vapor deposition at high temperatures provided the deposited atoms with the necessary surface mobility to ensure crystallinity and epitaxial growth. The use of high-temperaure CVD in the deposition of high-Tc superconducting ceramics and covalent materials such as diamond (see Figure) and boron nitride is reviewed, and, for example, the methods used to maintain the terahedral arrangement of neighboring atoms during deposition discussed.

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