Studied physical chemistry at the State University of Utrecht and at the Free University of Amsterdam, being awarded a Ph.D. in 1957 for work on Spectroscopy of Conjugated Hydrocarbon Negative Ions. After a period at the IBM Research Center in Yorktown Heights, N. Y., Dr. Balk was appointed to a chair in Semiconductor Electronics at the Aachen University of Technology in 1972. He transferred to the Delft University of Technology in 1987 to become the director of the Delft Institute of Microelectronics and Submicron Technology (DIMES). Since 1993 he has been in the Department of Applied Physics. His research interests are in the correlation between materials technology and the characteristics of electronics devices.
Dielectrics for Field Effect Technology
Article first published online: 15 SEP 2004
Copyright © 1995 Verlag GmbH & Co. KGaA, Weinheim
Volume 7, Issue 8, pages 703–710, August 1995
How to Cite
Balk, P. (1995), Dielectrics for Field Effect Technology. Adv. Mater., 7: 703–710. doi: 10.1002/adma.19950070804
- Issue published online: 15 SEP 2004
- Article first published online: 15 SEP 2004
- Manuscript Received: 24 NOV 1994
The availability of stable MOS gate systems and high density storage capacitors is an essential requirement for the development of the field effect storage technology. For standard MOSFET gates this role has been fulfilled by SiO2 grown by thermal oxidation of the Si substrate. Improved insight into the properties of the Si/Si02 system and perfection of its growth technology will secure its role in Si MOSFET memories for the future. For charge storage application the stability requirements are less demanding. However, here SiO2 is not able to provide sufficient capacity. In this case higher dielectric constant materials (Si3N4 or Ta2O5) have to take over. Particularly attractive appears the use of ferroelectrics. These dielectric materials not only offer a high dielectric constant, but also the perspective of providing non-volatile storage in capacitor structures.