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Porous etching: A means to enhance the photoresponse of indirect semiconductors

Authors

  • Dr. Ben H. Erné,

    Corresponding author
    1. Debye Institute, Department of Condensed Matter Utrecht University P. 0. Box 80 000, 3508 TA Utrecht (The Netherlands)
    • Debye Institute, Department of Condensed Matter Utrecht University P. 0. Box 80 000, 3508 TA Utrecht (The Netherlands)
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  • Dr. Daniël Vanmaekelbergh,

    1. Debye Institute, Department of Condensed Matter Utrecht University P. 0. Box 80 000, 3508 TA Utrecht (The Netherlands)
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  • Prof. John J. Kelly

    1. Debye Institute, Department of Condensed Matter Utrecht University P. 0. Box 80 000, 3508 TA Utrecht (The Netherlands)
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Abstract

A strategy for improving the photoresponse for junctions based on crystalline and polycrystalline semiconductors is presented. Porous etching is used to produce a layer (e.g., see Figure) within which the light is more effectively absorbed. By tailoring the porous layer, it is possible to ensure that the minority carriers, while generated deep within the semiconductor, are nevertheless able to reach the junction without recombining

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