A novel method for the preparation of nanosized tio2 thin films

Authors

  • Prof. Giorgio Sberveglieri,

    Corresponding author
    1. INFM, INCM, Department of Chemistry and Physics of Materials University of Brescia Via Valotti, 9, I–25133 Brescia (Italy)
    • INFM, INCM, Department of Chemistry and Physics of Materials University of Brescia Via Valotti, 9, I–25133 Brescia (Italy)
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  • Dr. Laura E. Depero,

    1. INFM, INCM, Department of Chemistry and Physics of Materials University of Brescia Via Valotti, 9, I–25133 Brescia (Italy)
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  • Dr. Paolo Nelli,

    1. INFM, INCM, Department of Chemistry and Physics of Materials University of Brescia Via Valotti, 9, I–25133 Brescia (Italy)
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  • Dr. Cesare Perego,

    1. INFM, INCM, Department of Chemistry and Physics of Materials University of Brescia Via Valotti, 9, I–25133 Brescia (Italy)
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  • Dr. Luigi Sangaletti,

    1. INFM, INCM, Department of Chemistry and Physics of Materials University of Brescia Via Valotti, 9, I–25133 Brescia (Italy)
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  • Dr. Matteo Ferroni,

    1. INFM, Department of Physics, University of Ferrara Via Paradiso, 12, I–44100 Ferrara (Italy)
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  • Dr. Vincenzo Guidi,

    1. INFM, Department of Physics, University of Ferrara Via Paradiso, 12, I–44100 Ferrara (Italy)
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  • Prof. Giuliano Martinelli

    1. INFM, Department of Physics, University of Ferrara Via Paradiso, 12, I–44100 Ferrara (Italy)
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  • We gratefully acknowledge assistance from D. Palmeri and the Center of Electron Microscopy of the University of Ferrara. The work was partially supported by the European Union under the Brite-Euram project “Functional nano-scaled materials for long term stable gas sensors (Nanogas)” No. BE-7303 (Contract No. BRE2-CT94–0940).

Abstract

Nanostructured titanium dioxide has many important applications, including several in chemical sensors, for example in “electronic noses”. A new method of preparing nanosized TiO2 thin films based on rf magnetron sputtering is reported and the characterization of the resulting films described. Results are presented for the temperature variation of the electrical response of the films to NO2, in particular the response and recovery times of the resistance of the layer.

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