InGaAlN and II–VI Systems for Blue–Green Light-Emitting Devices

Authors

  • Dr. Takashi Matsuoka

    Corresponding author
    1. NTT Opto-electronics Laboratories 3-1 Morinosato Wakamiya, Atsugi-shi Kanagawa Prefecture, 243–01 (Japan)
    • NTT Opto-electronics Laboratories 3-1 Morinosato Wakamiya, Atsugishi Kanagawa Prefecture, 243–01 (Japan)
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    • studied electronic engineering at Hokkaido University, receiving his B.S., M.E., and doctorate degrees in 1976, 1978, and 1988 respectively. In 1978 he joined Nippon Telegraph and Telephone (NTT), where he has worked on the development of semiconductor lasers, especially distributed feedback lasers, for long haul and high bit rate optical fiber communication systems. He has been actively researching InGaAlN systems and II–VI materials since 1987, and is now a Senior Research Engineer and SUpervisor of the Quantum-Effect-Device research group at the NTT Opto-electronics Laboratories.


  • I greatly appreciate Dr. Akira Ohki's efforts in collecting recent papers about II–VI materials. I also thank Dr. Hidetoshi Iwamura and Dr. Yutaka Matsuoka for giving me the opportunity to write this review.

Abstract

Recent progress in research on InGaAlN and II–VI systems has been remarkable, and this paper reviews the properties of these materials from the viewpoint of making reliable light-emitting devices. The growth of these materials by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE) is also reviewed, and the current status of both materials is reviewed with respect to light-emitting devices.

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