Epitaxial size control by mismatch tuning in electrodeposited Cd(Se, Te) quantum dots on {111} gold

Authors

  • Dr. Yuval Golan,

    1. Department of Materials and Interfaces, The Weizmann Institute of Science Rehovot 76100 (Israel)
    Current affiliation:
    1. Department of Chemical Engineering and Materials Research Laboratory, University of California at Santa Barbara, Santa Barbara, CA 93106, USA
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  • Dr. John L. Hutchison,

    1. Department of Materials University of Oxford Parks Road, Oxford OX1 3PH (UK)
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  • Dr. Israel Rubinstein,

    1. Department of Materials and Interfaces The Weizmann Institute of Science Rehovot 76100 (Israel)
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  • Dr. Gary Hodes

    1. Department of Materials and Interfaces The Weizmann Institute of Science Rehovot 76100 (Israel)
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  • We thank Dr. A. Pashusky and Dr. H. Cohen for assisting with the xps measurements. G. Hodes and I. Rubinstein acknowledge support for this work by the U. S. office of Naval Research, Grant No. N00014-93-1-1151.

Abstract

Since the crystal size of semiconductor quantum dots (QDs) affects the optoelectronic properties of QDs, a method of controlling the size is important. It is demonstrated that CdSe QDs electrodeposited epitaxially on {111} Au can be tuned from <5 to ∼ 20 nm by introducing small amounts of Te into the electrodeposited CdSe, i.e., by decreasing the mismatch between the deposited layer and the substrate. A further advantage of this technique is the ability to vary the bandgap continuously and controllably.

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