Advanced Materials

Influence of polar substituents on the epitaxy of oligothiophenes on graphite: A systematic STM investigation

Authors


  • Presented at the 8th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques, Snowmass Village, Colorado, USA, July 23–28, 1995. We gratefully acknowledge Dr. A. Baro for revising the manuscript. The authors would like to thank the Deutsche Forschungsgemeinschaft (SFB 329) for financial support.

Abstract

The variation of substituents of oligothiophenes can be used to control the epitaxy of the materials through systematic modification of intermolecular interactions. The STM characterization of new oligothiophenes (e.g. see Figure) is reported and is shown to provide useful structural information on the supramolecular assemblies which have potential in molecular optical and electronic applications.

original image

Ancillary