The application of heterostructure concepts to organic field effects transistors (FETs) is briefly reviewed. In particular, the physics of operation of α-sexithiophene- and C60-based FETs—which can act as p- or n-channel transistors depending on the sign and magnitude of the gate bias—and of isotype heterostructure FETs is outlined. In the latter, both active materials, e.g., an aromatic diamine and α-sexithiophene, transport the same (majority) carrier type.
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