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Advanced Materials

Molecular orbital energy level engineering in organic transistors

Authors

  • Dr. Ananth Dodabalapur,

    Corresponding author
    1. Lucent Technologies, Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974 (USA)
    • Lucent Technologies, Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974 (USA)
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  • Dr. Howard E. Katz,

    1. Lucent Technologies, Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974 (USA)
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  • Dr. Luisa Torsi

    1. Department of Chemistry, The University of Bari, Dipartimento di Chimica, Università di Bari Via Orabona 4, I-70126 Bari (Italy)
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  • The authors would like to thank R. C. Haddon, T. M. Miller, E. W. Kwock, L. J. Rothberg, and M. Galvin for helpful discussions.

Abstract

The application of heterostructure concepts to organic field effects transistors (FETs) is briefly reviewed. In particular, the physics of operation of α-sexithiophene- and C60-based FETs—which can act as p- or n-channel transistors depending on the sign and magnitude of the gate bias—and of isotype heterostructure FETs is outlined. In the latter, both active materials, e.g., an aromatic diamine and α-sexithiophene, transport the same (majority) carrier type.

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