This work was supported in part by NSF grant PHY 9312572 and made use of the Harvard MRSEC shared facilities. The authors acknowledge Hans Robinson, Dr. Hans Biebuyck, Dr. James L. Wilbur, and Dr. Jabez McClelland, for assistance with the initial stages of this work. The authors also thank Dr. Yuanchang Lu for assistance in generating SEM images, Joseph Thywissen for a careful reading of the manuscript, and Kent Johnson, Dr. Andreas Bard, and Dr. John Gillaspy for many helpful discussions.
Demonstration of a nanolithographic technique using a self-assembled monolayer resist for neutral atomic cesium†
Article first published online: 29 OCT 2004
Copyright © 1997 Verlag GmbH & Co. KGaA, Weinheim
Volume 9, Issue 1, pages 52–55, Januar 1997
How to Cite
Prentiss, M., Berggren, K. K., Younkin, R., Cheung, E., Tinkham, M., Ralph, D. C., Black, C. T., Whitesides, G. M. and Black, A. J. (1997), Demonstration of a nanolithographic technique using a self-assembled monolayer resist for neutral atomic cesium. Adv. Mater., 9: 52–55. doi: 10.1002/adma.19970090111
- Issue published online: 29 OCT 2004
- Article first published online: 29 OCT 2004
- Manuscript Revised: 2 SEP 1996
- Manuscript Received: 18 JUL 1996
A new lithographic method of making nanostructures is demonstrated in which a patterned beam of neutral cesium atoms is used to damage a ∼1.2-nm-thick self-assembled monolayer resist of alkanethiolates on gold. The attractive features of cesium for atomic lithography and the current techniques for neutral atom lithography are sketched. The method is detailed and investigations of the damage to the surface are described. This can be viewed as a first step towards fabricating nanostructures in silicon using optically patterned neutral atomic beams.