The structure of small GaAs clusters

Authors


  • The authors thank Dr. L. Chi, University of Münster, for performing the AFM measurements. Their thanks also go to Dr. P. Werner, Max Planck Institute for Microstructure Physics, Halle, for his valuable co- operation during the HRTEM studies. The Deutsche Forschungsgemeinschaft is gratefully acknowledged for support of this work (SFB 383: “Disorder in Solids on Mesoscopic Scales”).

Abstract

Semiconductor clusters, particularly gallium arsenide, have potential applications in nonlinear optical devices. Special interest is generated by the fact that their optical and electronic behavior depends on the size of the cluster. Direct evidence is presented for the occurrence of hexagonal, i.e., wurtzite-type structure, GaAs in clusters, whereas bulk GaAs has zinc-blende structure. High-resolution transmission electron microscopy, atomic force microscopy and electron diffraction results are reported and interpreted. Suggestions are made for further work.

Ancillary