A schottky barrier junction based on nanometer-scale interpenetrating GaP/Gold networks

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Abstract

An interpenetrating GaP and gold nanometer-scale network system has been formed by electrochemical deposition of the metal on a nanoporous n-type semiconductor GaP network. The electrical characteristics of the system–in particular capacitance and current–voltage measurements–indicate that a semiconductor/metal Schottky barrier junction with a huge internal contact area is produced, which could find applications in solid-state electronic devices.

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