Direction-Selective and Length-Tunable In-Plane Growth of Carbon Nanotubes

Authors


  • The authors gratefully acknowledge funding from the Office of Naval Research under Grant No. N00014-00-1-0250, and GR's NSF CAREER Award DMR 9984478.

Abstract

Chemical vapor deposition on selectively masked SiO2 patterns has been used to obtain controlled placement and exclusive in-plane growth of length- and direction-tunable carbon nanotubes (see Figure and inside cover). Nanotube bridges interconnecting SiO2 patterns are fabricated, and their electrical characteristics are demonstrated. This approach holds promise for manufacturing large-scale microelectronic systems integrated with nanotube–electrode units.

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