Communication

High-Density 40 nm Diameter Sb-Rich Bi2–xSbxTe3 Nanowire Arrays†

  1. M. Martín-González3,
  2. A.L. Prieto1,4,
  3. R. Gronsky2,
  4. T. Sands2,5,
  5. A.M. Stacy1

Article first published online: 16 JUN 2003

DOI: 10.1002/adma.200304781

Issue

Advanced Materials

Advanced Materials

Volume 15, Issue 12, pages 1003–1006, June, 2003

Additional Information

How to Cite

Martín-González, M., Prieto, A.L., Gronsky, R., Sands, T. and Stacy, A.M. (2003), High-Density 40 nm Diameter Sb-Rich Bi2–xSbxTe3 Nanowire Arrays. Adv. Mater., 15: 1003–1006. doi: 10.1002/adma.200304781

Author Information

  1. 1

    Department of Chemistry, University of California, Berkeley, CA 94720, USA

  2. 2

    Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA

  3. 3

    Current address: Instituto de Microelectrónica de Madrid, IMM (CNM-CSIC) C/Isaac Newton, 8 (PTM), E-28760-Tres Cantos, Madrid, Spain.

  4. 4

    Current address: Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, MA 02138, USA.

  5. 5

    Current address: School of Materials Engineering, School of Electrical and Computer Engineering, and the Birck Nanotechnology Center, Purdue University, 501 Northwestern Ave., West Lafayette, IN 47907-2036, USA.

  1. †

    This work was funded by the Department of Defense ONR-MURI on thermoelectrics, contract number N00014-97-1-0516. M.S.M.G thanks the MEC/Fulbright postdoctoral fellowship program and A.L.P. thanks Bell Labs, Lucent Technologies for funding. The authors would also like to thank Prof. Jeffrey Long and his group for the use of the bioanalytical systems Basomatic CV50W and Ron Wilson (Department of Materials Science, UCB) and for help with the SEM. We also thank the electron microscope laboratory and microfabrication laboratory for use of their facilities.

Publication History

  1. Issue published online: 16 JUN 2003
  2. Article first published online: 16 JUN 2003
  3. Manuscript Accepted: 6 MAR 2003
  4. Manuscript Received: 19 DEC 2002

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Keywords:

  • Arrays;
  • Bi2-xSbxTe3;
  • Electrodeposition;
  • Nanowires, semiconductor;
  • Thermoelectric materials

Arrays of 40 nm Bi2–xSbxTe3 nanowires (x ∼ 0.7, density ∼ 5 × 1010 cm–2) have been synthesized. The individual wires are crystalline, relatively homogeneous, and highly textured in a 〈110〉 direction after thermal treatment. Wires containing Sb exhibit incomplete wetting of the alumina templates in which they are grown (see Figure). The composition, crystallinity, and morphology of the nanowires can also be manipulated.

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