A Simple Route to the Synthesis of Pr2O3 High-k Thin Films

Authors


  • This work has been partially supported by MIUR (Ministero dell'Istruzione, dell'Università e della Ricerca). The authors wish to thank Mr. Corrado Bongiorno of the IMM CNR of Catania for assisting in TEM observation. The work reported herein was communicated in part at the EURO CVD-14 conference, Paris, France, 27 April – 2 May 2003.

Abstract

High-quality Pr2O3 high-k thin films with very promising electrical properties have been prepared by metal–organic chemical vapor deposition on Si(100) substrates. The most critical factor for selective and reproducible Pr2O3 film formation is the oxygen partial pressure in the reaction chamber. X-ray (see Figure) and transmission electron microscopy diffraction patterns show that the oxide layer grows with a hexagonal random structure.

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