A p-Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction Diodes

Authors

  • S. Narushima,

    1. Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
    Search for more papers by this author
  • H. Mizoguchi,

    1. Transparent ElectroActive Materials Project, Exploratory Research for Advanced Technology, Japan Science and Technology Corporation, KSP C-1232, 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan
    2. Present address: Department of Chemistry, Ohio State University, Columbus, OH 804-8550, USA.
    Search for more papers by this author
  • K. Shimizu,

    1. Department of Economics, Keio University, Hiyoshi, Yokohama 233-0061, Japan
    Search for more papers by this author
  • K. Ueda,

    1. Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
    2. Present address: Kyusyu Institute of Technology, 1-1 Sensui, Kita-Kyusyu 804-8550, Japan.
    Search for more papers by this author
  • H. Ohta,

    1. Transparent ElectroActive Materials Project, Exploratory Research for Advanced Technology, Japan Science and Technology Corporation, KSP C-1232, 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan
    Search for more papers by this author
  • M. Hirano,

    1. Transparent ElectroActive Materials Project, Exploratory Research for Advanced Technology, Japan Science and Technology Corporation, KSP C-1232, 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan
    Search for more papers by this author
  • T. Kamiya,

    1. Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
    2. Transparent ElectroActive Materials Project, Exploratory Research for Advanced Technology, Japan Science and Technology Corporation, KSP C-1232, 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan
    Search for more papers by this author
  • H. Hosono

    1. Transparent ElectroActive Materials Project, Exploratory Research for Advanced Technology, Japan Science and Technology Corporation, KSP C-1232, 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan
    Search for more papers by this author

Abstract

Oxide electronics, which together with amorphous semiconductors could become a rapid-growth field, have come a step closer with the first report of a p-type amorphous oxide semiconductor, ZnO·Rh2O3. The thin-film deposition of this material at room temperature and the fabrication of p–n heterojunction diodes on flexible plastic sheets (see Figure) are demonstrated.

Ancillary