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Advanced Materials

30 nm Channel Length Pentacene Transistors

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  • This work was supported primarily by the Nanoscale Science and Engineering Initiative of the National Science Foundation under NSF Award Number EEC-0117770, with additional support from NSF DMR-0071631 and DARPA. A portion of this work was conducted at the Cornell Nanofabrication Facility (a member of the National Nanofabrication Users Network) which is supported by the National Science Foundation under Grant ECS-9731293.

Abstract

Advances in sample fabrication have allowed the fabrication of pentacene transistors with channel lengths down to 30 nm. The Figure shows a transistor with a channel length and width of 27 nm and 130 nm, respectively. Graceful scaling of the current–voltage characteristics as a function of channel length and width is demonstrated.

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